ace 7407 a p - channel enhancement mode mosfet ver 1.1 1 d escription the ACE7407A is the p - channel logic enhancement mode power field effect transisto rs are produced using high cell density , dmos trench technology. this high density pr ocess is especially tailored to minimize on - state resistance. these dev ices are part icularly suited for low voltage application such as cellular phone and notebook computer power manag ement and other battery powered circuits where high - s ide switching, and low in - line power loss are needed in a very small outline sur face mount package. features ? - 20v/ - 3.4a, r ds (on) = 100m@vgs= - 4.5v ? - 20v/ - 2.4a, r ds (on) = 125m @vgs= - 2.5v ? - 20v/ - 1.7a, r ds (on) = 150m @vgs= - 1.8v ? - 20v/ - 1.0a, r ds (on) = 220m @vgs= - 1.25v ? super high density cell design for extremely low r ds (on) ? exceptional on - resistance and maximum dc current capability application ? power management in note book ? portable equipment ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter
ace 7407 a p - channel enhancement mode mosfet ver 1.1 2 absolute maximum ratings parameter symbol max unit drain - source voltage v dss - 2 0 v gate - source voltage v gss 12 v continuous drain current (t j =150 ) t a =25 i d - 2.3 a t a =70 - 1.7 pulsed drain current i dm - 6 a continuous source current (diode conduction) i s - 1.4 a power dissipation t a =25 p d 0.33 w t a =70 0.21 operating junction temperature t j - 55/150 o c storage temperature range t stg - 55/150 o c thermal resistance - j unction to ambient r ja 10 5 o c /w packaging type sot - 323 3 1 2 ordering information ACE7407A cm + h sot - 323 description 1 gate 2 source 3 drain halogen - free c m : sot - 323 pb - free
ace 7407 a p - channel enhancement mode mosfet ver 1.1 3 electrical characteristics t a =25 , unless otherw ise noted parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0 v, i d = - 250ua - 20 v gate threshold voltage v gs(th) v d s =v gs , i d = - 250 ua - 0.35 - 0.8 gate leakage current i gss v ds =0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 2 0 v, v gs =0v - 1 ua v ds = - 20v , v gs =0v t j = 5 5 - 5 v ds R - 5 v, v gs = - 4.5 v - 6 a drain - source on - resistance r ds(on) v gs = - 4.5 v, i d = - 3.4 a 0.080 0.100 v gs = - 2 .5 v, i d = - 2.4 a 0.105 0.125 v gs = - 1.8 v, i d = - 1.7 a 0.130 0.150 v gs = - 1.25 v, i d = - 1.0 a 0.180 0.22 forward transconductance gfs v ds = - 5 v ,i d = - 2.8 a 6 s diode forward voltage v sd i s = - 1.5 a, v gs =0v - 0.8 - 1.2 v dynamic total gate charge q g v ds = - 6 v, v gs = - 4.5 v, i d = - 2.8 a 4.8 8 nc gate - source charge q gs 1.0 gate - drain charge q gd 1.0 input capacitance ciss v ds = - 6 v, v gs =0v, f=1mhz 4 85 pf output capacitance coss 85 reverse transfer capacitance crss 40 turn - on time td(on) v dd = - 6 v, r l = 6 , v gen = - 4.5 v, i d = - 1.0 a , r g = 6 10 16 ns tr 13 23 turn - off time td(off) 18 25 tf 15 20
ace 7407 a p - channel enhancement mode mosfet ver 1.1 4 typi cal performance characteristics output characte ristics transfer characteristics v ds - drain - to - sourc e voltage (v) v gs - gate - to - source voltage (v) on - resistance vs. drain current capacitance i d - drain current ( a) v ds - drain - to - source voltage (v) gate charge on - resistance vs. junction temperature q g - total gate charge (nc) t j - junction temperature ( )
ace 7407 a p - channel enhancement mode mosfet ver 1.1 5 typical performance characteristics source - drain diode forward voltage on - resistance vs. gate - to - source voltage v sd - source - to - drain voltage (v) v gs - gate - to - source voltage (v) threshold voltage single pulse power t j - temperature( ) time (sec) normalized thermal transient impedance, junction - to foot square wave puls e duration (sec)
ace 7407 a p - channel enhancement mode mosfet ver 1.1 6 packing information so t - 323
ace 7407 a p - channel enhancement mode mosfet ver 1.1 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written ap proval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure t o perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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